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Data Sheet
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Ri JC Value 1.5 Unit C/W
Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS -0.5, 15 Total Dissipation at TC = 25 C PD 117 Derate Above 25 C -- 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG -65, 150 Unit Vdc Vdc W W/C C C
Figure 1. AGR21045EF (flanged) Package
Features
Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 - 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 - 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: -- Output power: 10 W. -- Power gain: 14.5 dB. -- Efficiency: 26%. -- IM3: -33 dBc. -- ACPR: -37 dBc. -- Return loss: -12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 45 W continuous wave (CW) output power. Large signal impedance parameters available.
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Table 3. ESD Rating* AGR21045EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) = 50 A) Drain-source Breakdown Voltage (VGS = 0, ID = 200A V(BR)DSS IGSS IDSS GFS 65 -- -- -- -- -- -- 3.2 2 75 5 -- -- Adc Adc S Vdc Symbol Min Typ Max Unit
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.5 A) Gate Threshold Voltage (VDS = 10 V, ID = 150 A) Drain-source On-voltage (VGS = 10 V, ID = 0.5 A) Gate Quiescent Voltage (VDS = 28 V, ID = 400 mA)
VGS(TH) VDS(ON) VGS(Q)
2.8 3.0 --
3.4 3.8
4.8 4.6 --
Vdc Vdc Vdc
0.22
Table 5. RF Characteristics Parameter Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Common-source Amplifier Power Gain* Third-order Intermodulation Distortion* (IM3 distortion measured over 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 - 5 MHz and f2 + 5 MHz) Input Return Loss* Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2140.0 MHz) Drain Efficiency* Symbol Dynamic Characteristics CRSS -- 1.0 -- pF Min Typ Max Unit
Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) GPS IM3 ACPR IRL 13.5 24 -- 14.5 -33 -37 -12 47 26 -- -- dB dBc dBc dB W %
-32 -35 -9 --
-- --
P1dB
42
Output Mismatch Stress (VDD = 28 V, POUT = 45 W (CW), IDQ = 400 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles])
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 400 mA, and POUT = 10 W avg.
Data Sheet
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21045EF
FB1 VGG + C4 C3 Z1 RF INPUT C1 C2 Z2 Z5 Z3 Z4 R1 PINS: 1. DRAIN 2. GATE 3. SOURCE 2 DUT 1 3 Z6 VDD + Z10 Z7 C6 Z8 C7 C8 C9 C10 C5 Z9 RF OUTPUT
A. Schematic
Parts List: Microstrip line: Z1 0.780 in. x 0.066 in.; Z2 0.225 in. x 0.090 in.; Z3 0.360 in. x 0.090 in.; Z4 0.320 in. x 0.520 in.; Z5 0.050 in. x 0.430 in.; Z6 0.335 in. x 0.330 in.; Z7 0.215 in. x 0.330 in.; Z8 0.450 in. x 0.066 in.; Z9 0.685 in. x 0.066 in.; Z10 0.050 x 0.715 in. ATC (R) chip capacitor: C1, C5: 8.2 pF 100B8R2JW500X; C2, C6 6.8 pF 100B6R8JW500X. Kemet (R) capacitor: C8 0.01 F C1206104K5RAC7800; C9 0.1 F GRM40X7R103K100AL. Vitramon (R) 1206 capacitor: C3, C7: 22,000 pF. Sprague (R) tantalum capacitor: C4, C10: 22 F, 35 V. Fair-Rite (R) ferrite bead: FB1 2743019447. 1206 size chip resistor: R1 12 . Taconic(R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout Figure 2. AGR21045EF Test Circuit
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Data Sheet
Typical Performance Characteristics
0.0 > WA VELE 0.49 N GTH S TOW A RD 0.48 0.0 0.49 LOA D < OW A RD 0.48 180 HST .47 0 GT 170 -170 L EN VE WA < -90 90 -160
U CT
IN D
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0.2
0.1
0.4
) / Yo (-jB CE
0.6
-85
AN PT CE US ES
1. 0
0.2
-80
IV CT
IN
DU
0.3
-75
5 0.0
,O o)
.45
-70
06
0.
-65
0.6
-60
1.6
0.7
1.4
1.2
0.9
-5
1.0
0
-5
5
-4
MHz (f) 2110 (f1) 2140 (f2) 2170 (f3)
ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 3.26 - j9.91 5.66 - j6.84 3.20 - j9.64 5.49 - j6.61 3.13 - j9.41 5.31 - j6.40 GATE (2) ZS DRAIN (1) ZL SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
0.3
0.8
3
0.3
0.1
4
6
-3
5
-70
5
0.35
0.15
0.36
0.14 -80
-4
0
0.37
0.13
-90
0.12
0.38
0.11 -100
0.39
0.1
0.4
-110
0.0
0
9
.41
0.4
2
Z0 = 10
0.
32
0.
1.8
18
0 -5 -25
0.1
7
-30
-60
0.2
ZS
44
5
0.
0.
2.
0
0.4
CA P AC I TI
VE
RE AC TA N
-12
CE CO M
0
0.0
PO N
8
EN
T
(-j
-1
0.
40
0
4
Z X/
f2
f1
-20
3.
0
0.6
ZL
6 0.4 4 0.0 0 -15
R
-15
4.0
1.
0
f3
f1
0.8
-10
0.
8
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
10
5.0
0.
8
0.6
0.4
0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM
10
L E OF ANG
0.2
-1
0. 07 30
0.
43
0.1
20
50
D EGR EES
-20
0.2 2
0.2 8
0.2 9 0.2 1
-30
0.2 0.3
-4 0
0. 19 0. 31
Data Sheet
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
16.0 15.5 15.0 POWER GAIN (dB) S 14.5 14.0 13.5 13.0 12.5 12.0 11.5 11.0 0.10 1.00
IDQ = 300 IDQ = 350 mA
VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz TWO-TONE MEASUREMENT 10 MHz TONE SPACING
IDQ = 500 mA
IDQ = 450 mA
IDQ = 400 mA
10.00
100.00
OUTPUT POWER (W) PEP
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
-20.0 -25.0 IMD3, THIRD ORDER (dBc) -30.0 -35.0 -40.0 -45.0 -50.0 -55.0 -60.0
VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz TWO-TONE MEASUREMENT 10 MHz TONE SPACING
IDQ = 300 mA IDQ = 350 mA
IDQ = 500 mA IDQ = 400 mA IDQ = 450 mA
-65.0 0.10
1.00
10.00
100.00
OUTPUT POWER (W) PEP
Figure 5. IMD3 vs. Output Power and IDQ
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Data Sheet
Typical Performance Characteristics (continued)
0.0 -5.0 -10.0 -15.0 -20.0 IMD (dBc)Z -25.0 -30.0 -35.0 -40.0 -45.0 -50.0 -55.0 -60.0 0.1 1 10 100 IM3 IM5 IM7 VDD = 28 V, POUT = 45 W PEP, Fo = 2140 MHz
TWO-TONE SPACING (MHz)Z
Figure 6. IMD vs. Tone Spacing
20.00 18.00 16.00 14.00 GAIN (dB)Z 12.00 10.00 8.00 6.00 4.00 2.00 0.00 0.00 IMD3 ACPR DRAIN EFFICIENCY 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 -50.0 -55.0 25.00
GAIN
2 CARRIER W-CDMA 3GPP, PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF 10 MHz SPACING, 3.84 MHz CBW, FC = 2140 MHz, VDD = 28 V, IDQ = 400 mA
5.00
10.00
15.00
20.00
OUTPUT POWER (WATTS-AVERAGE)Z
Figure 7. Gain, Efficiency, IMD3, and ACPR vs. Output Power
EFF (%), IMD3 (dBc), ACPR (dBc)Z
Data Sheet
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
20.00 18.00 16.00 14.00 GAIN (dB)Z 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2100 IMD3 ACPR 2110 2120 2130 2140 2150 2160 2170 GAIN 2 CARRIER W-CDMA 3GPP, PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF 10 MHz SPACING, 3.84 MHz CBW, POUT = 10 W, VDD = 28 V, IDQ = 400 mA RL 50.0 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 -50.0 2180
FREQUENCY (MHz)Z
Figure 8. Broadband Performance
+5 -0 -5 -10 -15 -20 -25 -30 -35 -40 -45
CENTER 2.140 GHz
F1
F2 2 CARRIER W-CDMA 3GPP PEAK-TO-AVG = 8.5 dB @ 0.01% CCDF 10 MHz SPACING 3.84 MHz CBW POUT = 10 W VDD = 28 V IDQ = 400 mA
IMD3
IMD3
ACPR
ACPR
SPAN 50 MHz
Figure 9. Spectral Plot
EFF (%), RL (dB), IMD3 (dBc), ACPR (dBc)Z
EFFICIENCY
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Data Sheet
Typical Performance Characteristics (continued)
15.0 14.0 13.0 12.0 11.0 10.0 9.0 10.0 VDD = 28 Vdc FO = 2140 MHz IDQ = 400 mA CW INPUT AM to AM (POWER GAIN [dB]) 4.0 2.0 0.0 -2.0 POWER GAIN (dB)Z AM to PM (PHASE [DEGREES]) -4.0 -6.0 -8.0 -10.0 -12.0 -14.0 -16.0 -18.0 15.0 20.0 25.0 PIN (dBm)Z 30.0 35.0 -20.0 40.0 PHASE (DEGREES)Z
Figure 10. AM-AM and AM-PM Characteristics
Data Sheet
AGR21045EF 45 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are 0.005 in. unless specified.
AGR21045EF
PINS: 1. DRAIN 2. GATE 3. SOURCE
1
PEAK DEVICES AGR21045XF AR G 21045F YYWWLL XXXXX Y W LL YW ZZZZZZZ ZZZZZZZ
1 3 3 2
2
Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. The last two letters of the part number denote wafer technology and package type.

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